Abstract:

In this study, β-Zn₄Sb₃ thermoelectric thin films were fabricated by radio-frequency magnetron sputtering with subsequent electron beam (EB) irradiation with different doses of 0~800 kGy and thermal annealing. The microstructures and surface morphologies of the films were characterised by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The electrical transport and thermoelectric properties of the films were analysed by Hall effect and Seebeck effect measurements. All samples exhibited p-type conduction characteristics. The phase compositions and average grain sizes of the samples subjected to EB irradiation slightly changed, the film surface was more densely compacted, and the grain growth exhibited a preferred orientation along the (223) crystallographic plane. When the EB irradiation dose was 200 kGy, the power factor of the sample reached 6.90 μW/(cm·K²) as the Seebeck coefficient was effectively increased while the conductivity was slightly reduced. This power factor was increased by 41.7% compared to that of the sample without EB irradiation.

Key words: thermoelectric, β-Zn₄Sb₃ thin film, magnetron sputtering, electron beam irradiation, power factor