磁控溅射法制备Half-Heusler化合物半导体TiCoSb薄膜

doi:10.3969/j.issn.1007-2861.2013.01.014

Abstract

Abstract: A special TiCoSb composite target is designed with the convenience of adjusting film composition by varying the area of each element in the target. Using this target, polycrystalline TiCoSb thin films with single phase are successfully fabricated through direct current magnetron sputtering and rapid thermal annealing. The film structure and surface morphology of TiCoSb thin films are analyzed with XRD (X-ray diffraction) and AFM (atomic force microscopy). The electrical properties of the films are studied by Hall effect measurements. The results show that the TiCoSb thin films are uniform and dense, and have good adhension to the quartz glass substrate. The TiCoSb thin film annealed at 600 ºC for 5 min has better crystalline quality than those annealed at lower temperatures, having conductivity of 13.7 S/cm at room temperature.

Key words: annealing, half-Heusler, magnetron sputtering, TiCoSb thin film, thermoelectric

CLC Number:

O 484.4

ZHANG Min, QIN Juan, SUN Niu-yi, ZHANG Xiao-li, SHI Wei-min. Preparation of Half-Heusler Compound Semiconductor TiCoSb Thin Film by Magnetron Sputtering[J]. Journal of Shanghai University（Natural Science Edition）, 2013, 19(1): 71-74.

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Preparation of Half-Heusler Compound Semiconductor TiCoSb Thin Film by Magnetron Sputtering

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