Journal of Shanghai University(Natural Science Edition) ›› 2012, Vol. 18 ›› Issue (3): 327-330.doi: 10.3969/j.issn.1007-2861.2012.03.021
• Material Science • Previous Articles
YU Fan-feng,JIN Jing,SHI Wei-min,QU Xiao-lei,XU Yue-yang
Online:
Published:
Abstract: This paper introduces a method of multicycle rapid thermal annealing that induces crystallization of amorphous silicon films deposited on the normal glass. The structure, surface morphology and electron mobility of the silicon films were investigated with Raman spectra, atomic force microscope (AFM), UV-VIS spectrophotometer and Halleffect measurements. The results show that the crystallization appears for films annealed at 680 ℃. As rapid thermal annealing cycles are increased, the Raman spectra indicate that the characteristic peak of polycrystalline silicon (poly-Si) film appears at 500 cm-1. The maximal crystalline fraction of polySi film is 71.9% after 5 cycles annealing treatment. The optical band gap decreases with the grain growing, and the carrier mobility increases.
Key words: amorphous silicon, crystallization, multi-cycle rapid thermal annealing
CLC Number:
O 484
YU Fan-feng,JIN Jing,SHI Wei-min,QU Xiao-lei,XU Yue-yang. Crystallization of Amorphous Silicon Films on Glass Substrate by Multi-cycle Rapid Thermal Annealing[J]. Journal of Shanghai University(Natural Science Edition), 2012, 18(3): 327-330.
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URL: https://www.journal.shu.edu.cn/EN/10.3969/j.issn.1007-2861.2012.03.021
https://www.journal.shu.edu.cn/EN/Y2012/V18/I3/327