1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器

doi:10.12066/j.issn.1007-2861.1982

Abstract

Abstract:

An improved way of fabricating 1.3 $\mu$m distributed feedback (DFB) laser is presented to avoid overgrowth and deep etching. This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide. It is named laterally coupled DFB (LC-DFB) laser, whose properties is better than that of traditional DFB lasers. Two InAs/GaAs quantum dot (QD) samples, undoped QD and p-doped QD are prepared for DFB lasers. A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers. A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers. The index-coupled LC-DFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio (SMSR) of 51 dB. The laser also shows good wavelength stability against drive current and working temperature. The 1.3 $\mu$m InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics comunication.

Key words: distributed feedback (DFB) laser, laterally coupled (LC), shallow-etched grating, side mode suppression ratio (SMSR)

CLC Number:

TN31

Qizhu LI, Xia FU, Ziyang ZHANG, Xu WANG, Hongmei CHEN, Chuncai HOU, Yuanqing HUANG, Chunyang GUO, Jiahua MIN. 1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings[J]. Journal of Shanghai University（Natural Science Edition）, 2019, 25(4): 472-483.

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1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings

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