InAs/GaAs量子点生长的KMC模拟

doi:10.12066/j.issn.1007-2861.1866

Abstract

Abstract:

The kinetic Monte Carlo (KMC) model is used to simulate the initial phase of the growth of InAs quantum dots on GaAs strain relaxation substrate. The strain relaxation of GaAs substrate can be obtained by burying InAs quantum dot in the substrate. The Green's function method is used to calculate strain energy distributed in the substrate surface under different burial depths. The calculation results are applied to the growth process, in which the effects of temperature, deposition rate and buried depth on the growth are considered. Simulation results show that, by controlling the growth temperature and deposition rate, uniform and orderly distribution of 2D islands can be obtained. In addition, the greater the depth of burial, the more unfavorable to the atomic aggregation.

Key words: quantum dot, kinetic Monte Carlo (KMC) simulation, growth temperature, deposition rate, strain energy

CLC Number:

O343

CHEN Long, XU Kaiyu. KMC simulation for growth of InAs/GaAs quantum dots[J]. Journal of Shanghai University（Natural Science Edition）, 2018, 24(3): 367-377.

Figures/Tables 7

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Table 1

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References 25

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KMC simulation for growth of InAs/GaAs quantum dots

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