FIB 刻蚀对电化学制备多孔硅的影响

doi:10.3969/j.issn.1007-2861.2013.07.036

上海大学学报(自然科学版) ›› 2014, Vol. 20 ›› Issue (3): 355-361.doi: 10.3969/j.issn.1007-2861.2013.07.036

FIB 刻蚀对电化学制备多孔硅的影响

王婧洁1,2, 徐甲强1, 焦继伟2

1. 上海大学理学院, 上海200444; 2. 中国科学院上海微系统与信息技术研究所, 上海200050

收稿日期:2013-03-20 出版日期:2014-06-26 发布日期:2014-06-26
通讯作者: 徐甲强(1963—), 男, 教授, 博士生导师, 博士, 研究方向为纳米材料合成化学与工艺、敏感材料与器件等. E-mail:xujiaqiang@shu.edu.cn
作者简介:徐甲强(1963—), 男, 教授, 博士生导师, 博士, 研究方向为纳米材料合成化学与工艺、敏感材料与器件等. E-mail: xujiaqiang@shu.edu.cn
基金资助:
国家自然科学基金资助项目(60876079)

Effect on Electrochemical-Made Porous Silicon by FIB Etching

WANG Jing-jie1,2, XU Jia-qiang1, JIAO Ji-wei2

1. College of Sciences, Shanghai University, Shanghai 200444, China;
2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2013-03-20 Online:2014-06-26 Published:2014-06-26

摘要/Abstract

摘要： 通过聚焦离子束(focused ion beam, FIB) 轰击处理制备得到一种新的微纳级多孔硅结构, 并通过实验实现可控化. 在图形化过程中, FIB 轰击处的周围区域内多孔硅的电化学腐蚀被抑制, 出现了抑制区, 称为屏蔽区域. 屏蔽区域的形成主要是由FIB 轰击过程中硅粒子的二次碰撞所引起的. 屏蔽区域的宽度在一定范围内与FIB 的轰击电压、硅衬底的阻值成正相关. 报道了一种圆形多孔硅结构: 圆环上多孔硅密集分布, 而环内完全没有孔结构, 圆外围的屏蔽区域依然存在, 使得该圆形结构得以从周围环境中独立出来. 这种内部完全屏蔽的圆结构的直径最大可达10 μm.

关键词: 二次碰撞效应, 聚焦离子束, 屏蔽区域, 多孔硅, 二次碰撞效应, 聚焦离子束, 屏蔽区域, 多孔硅

Abstract: A porous silicon (PSi) process for realizing controllable micro-to-nano scale features after focused ion beam (FIB) treatment is reported. An area, in which electrochemical etching is suppressed, therefore termed a shielding area, exists around the patterns treated by FIB. The area is formed due to a secondary knocked-on effect in the FIB process. The size of the shielding area is positively related to the energy used in FIB and resistivity of the silicon substrate. The shielding area on PSi has a width of 14 μm. The circular feature of PSi with a diameter as large as 10 μm is reported here for the first time. Inside the area no pores appear, while outside the shielding area remains.

Key words: focused ion beam (FIB), secondary knocked-on effect, shielding area, porous silicon (PSi), focused ion beam (FIB), secondary knocked-on effect, shielding area, porous silicon (PSi)

中图分类号:

TN 305

王婧洁1,2, 徐甲强1, 焦继伟2. FIB 刻蚀对电化学制备多孔硅的影响[J]. 上海大学学报(自然科学版), 2014, 20(3): 355-361.

WANG Jing-jie1,2, XU Jia-qiang1, JIAO Ji-wei2. Effect on Electrochemical-Made Porous Silicon by FIB Etching[J]. Journal of Shanghai University（Natural Science Edition）, 2014, 20(3): 355-361.

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FIB 刻蚀对电化学制备多孔硅的影响

Effect on Electrochemical-Made Porous Silicon by FIB Etching

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