Te inclusions in CdZnTe crystals grown from solution has been investigated with transmission infrared (IR) microscopy, photography of etch pits and Fourier transform infrared (FTIR) transmission spectroscopy. Distribution and origination of Te inclusions in CdZnTe crystals are discussed, and the influence on the etch pit density (EPD) and IR transmittance are analyzed. The experimental results show that the density of Te inclusions increases along the growth direction, while the EPD increases. IR transmission decreases as the density of Te inclusions increases. The crystal in tail ingot has low transmittance of about 45%.
WANG Dong, MIN Jia-hua, LIANG Xiao-yan, SUN Xiao-xiang, LIU Wei-wei, ZHANG Ji-jun, WANG Lin-jun
. Analysis of Te Inclusions in CdZnTe Crystal Growth from Solution[J]. Journal of Shanghai University, 2013
, 19(1)
: 67
-70
.
DOI: 10.3969/j.issn.1007-2861.2013.01.013
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