| [1] Min J H, Chen J, Liang X Y, et al. Effects of gradient heat treatment on Te-rich CdZnTe crystal [J].Vacuum, 86(7): 994-997.[2] Shin H Y, Sun C Y. Temperature-gradient-solution grown CdTe crystals for -ray detectors [J]. Journal of Crystal Growth, 1998, 186: 67-78.[3] Limousin O. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications [J]. Nucl Instrument Methods Phys Res A, 2003, 504: 24-37.[4] Min J H, Shi Z B, Qian Y B, et al. Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors [J]. Nuclear Science and Techniques, 2009,20(1): 46-50.[5] Czock K H, Arlt R. Use of CdZnTe detectors to analyze gamma emission of safeguards samples in the field [J]. Nucl Instrument Methods Phys Res A, 2001,458: 175-182.[6] Fiederle M, Feltgen T, Meinhardt J, et al. State of the art of (Cd,Zn) Te as gamma detector [J]. Journal of Crystal Growth, 1999, 197: 635-640.[7] Turjanska L, Hoschl P, Belas E, et al. Defect structure of CdZnTe [J]. Nucl Instrument Methods Phys Res A, 2001, 458: 90-95.[8] Hu S Y, Henager C H, Jr. Phase-field simulations of Te-precipitate morphology and evolution kinetics in Terich CdTe crystals [J]. Journal of Crystal Growth, 2009,311: 3184-3194.[9] Min J H, Sang W B, Liu H T, et al. Improving the properties of CdZnTe crystals by annealing processes [J]. Rare Metal Materials and Engineering, 2007, 36(3): 471-474.[10] 栾丽君,介万奇. 垂直布里奇曼法生长的Cd0.8Mn0.2Te单晶体中Te沉淀相分析[J]. 电子显微学报, 2009, 28(1): 57-61.[11] 刘从峰,孙士文,方维政,等. 碲锌镉晶体第二相夹杂物特性研究[J]. 红外与激光工程, 2007, 36: 46-49.[12] Hossain A, Xu L, Bolotnikov A E, et al. Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices [J].Nucl Instrument Methods Phys Res A, 2011, 652: 146-148. |
