This paper introduces a method of multicycle rapid thermal annealing that induces crystallization of amorphous silicon films deposited on the normal glass. The structure, surface morphology and electron mobility of the silicon films were investigated with Raman spectra, atomic force microscope (AFM), UV-VIS spectrophotometer and Halleffect measurements. The results show that the crystallization appears for films annealed at 680 ℃. As rapid thermal annealing cycles are increased, the Raman spectra indicate that the characteristic peak of polycrystalline silicon (poly-Si) film appears at 500 cm^-1. The maximal crystalline fraction of polySi film is 71.9% after 5 cycles annealing treatment. The optical band gap decreases with the grain growing, and the carrier mobility increases.