Abstract: The traditional chemical mechanical polishing (CMP) technology for single crystal silicon carbide (SiC) faces challenges with low processing efficiency. Consequently, improving surface quality and material removal rates of SiC has emerged as a research focal point. This paper provides a summary of the main components of CMP polishing liquids, compares the effects of CMP-assisted polishing technology on the performance and mechanisms of single crystal SiC polishing, and offers prospects for the future development of CMP for single crystal SiC.

Key words: silicon carbide (SiC), chemical mechanical polishing (CMP), CMP assisted technology, polishing rate