| [1] Lin V S, Motesharei K, Dancil K P, et al. A porous silico n-based optical interferometric biosensor [J]. Science, 1997, 278(840): 840-843.[2] Naddaf M, Mariri A A. Porous silicon as a platform for immobilization of biotin anti-human IL-6; rat IgG2a antibody onto p-type porous silicon via physical absorption method [J]. Sensors and Actuators B, 2011, 160: 835-839.[3] Pavlikov A V, Lartsev A V, Gayduchenko I A, et al. Optical properties of materials based on oxidized porous silicon and their applications for UV protection [J]. Microelectronic Engineering, 2012, 90: 96-98.[4] Stewart M P, Buriak J M. Chemical and biological applications of porous silicon technology [J]. Adv Mater, 2000, 12(12): 859-869.[5] Anglin E J, Cheng L, Freeman W R, et al. Porous silicon in drug delivery devices and materials [J]. Advanced Drug Delivery Reviews, 2008, 60: 1266-1277.[6] Szili E J, Jane S P, Low M, et al. Interferometric porous silicon transducers using an enzymatically amplified optical signal [J]. Sensors and Actuators B, 2011, 160: 341-348.[7] Jane A, Dronov R, Hodges A, et al. Porous silicon biosensors on the advance [J]. Trends in Biotechnology, 2009, 27: 230-239.[8] Content S, Trogler W C, Sailor M J, et al. Detection of nitrobenzene, DNT, and TNT vapors by quenching of porous silicon photoluminescence [J]. Chemistry-A European Journal,2000, 6(12): 2205-2213.[9] Pacholski C, Sartor M, Sailor M J, et al. Biosensing using porous silicon double-layer interferometers: reflective interferometric Fourier transform spectroscopy [J]. JACS, 2005, 127:11636-11645.[10] Mulloni V, Pavesi L. Porous silicon microcavities as optical chemical sensors [J]. Applied Physics Letters, 2000, 76: 2523-2525.[11] Li Y Y, Cunin F, Link J R, et al. Polymer replicas of photonic porous silicon for sensing and drug delivery applications [J]. Science, 2003, 299: 2045-2047.[12] Ubanov S R, Munroe P R. FIB-induced damage in silicon [J]. Journal of Microscopy, 2004, 214(3): 213-221.[13] Rubanov S, Munroe P R. Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam [J]. Journal of Materials Science Letters, 2001, 20: 1181-1183.[14] Drezner Y, Fishman D, Greenzweig Y, et al. Characterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias [J]. J Vac Sci Technol B, 2011, 29(1):011026.[15] Spoldi G, Beuer S, Rommel M, et al. Experimental observation of FIB induced lateral damage on silicon samples [J]. Microelectronic Engineering, 2009, 86: 548-551.[16] Duttagupta S P, Peng C, Fauchet P M, et al. Enhancement and suppression of the formation of porous silicon [J]. J Vac Sci Technol B, 1995, 13(3): 1230-1235.[17] 章小鸽. 硅及其氧化物的电化学——表面反应、结构和微加工[M]. 北京: 化学工业出版社, 2004: 329. |
