Abstract:

In this paper, molecular dynamic simulation is performed to predict elastic stiffness and bulk modulus for Gallium nitride (GaN) quantum dots with strain.Different strain configurations are first imposed on the zincblende and wurzite samples, respectively, and relations between bulk strain and system energy are obtained. All elastic moduli can be calculated from the system energy equations simulated with a molecular dynamic method. The calculated moduli without strain agree well with the previous theoretical studies and the available measured values.

Key words: molecular dynamic; Gallium nitride(GaN); quantum dots; volume modulus; elastic stiffness