Journal of Shanghai University(Natural Science Edition)

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Microwave Equivalent Model of Tuned MEMS Shunt-Capacitive Switches

LI Yue-fei,YANG Xue-xia,ZHANG Wen-jun   

  1. School of Communication and Information Engineering, Shanghai University, Shanghai 200072, China

  • Received:2005-05-12 Revised:1900-01-01 Online:1900-01-01 Published:1900-01-01
  • Contact: YANG Xue-xia

Abstract:

By analyzing electromagnetic characteristics of a microwave equivalent circuit model, the offstate resonance choice formulation and on-state impedance matching formulation of tuned MEMS shunt-capacitive switches is presented. A design method of tuned MEMS shunt-capacitive switches is developed based on an analysis of the microwave equivalent circuit. Numerical results of the circuit simulation of a MEMS switch for the X band based on these design models are described. Electromagnetic characteristics of the switch are confirmed with a high frequency full-wave simulation software. This is useful in designing high-performance RF MEMS switches.

Key words: CPW, electromagnetic-characteristic, shunt-capacitive switch, MEMS