[1] Ali I, Roy S, Shinn G. Chemical mechanical polishing of interlayer dielectric: a review [J].Solid State Technol, 1994, 37(10): 63-70.[2] Bukkapatnam S T S, Rao P K, LihWC, et al. Process characterization and statistical analysisof oxide CMP on a silicon wafer with sparse data [J]. Appl Phys, 2007, A88: 785-792.[3] Lei H, Luo J B. CMP of hard disk substrate using colloidal SiO2 slurry: preliminary experimentalinvestigation [J]. Wear, 2004, 257(5/6): 461-470.[4] Qi Z Q, Lee W M. XPS study of CMP mechanisms of NiP coating for hard disk drivesubstrates [J]. Tribol Int, 2010, 43: 810-814.[5] PatrickWJ, GuthrieWL, Standley C L, et al. Application of chemical mechanical polishingto the fabrication of VLSI circuit interconnections [J]. J Electrochem Soc, 1991, 138(6): 1778-1784.[6] Nguyen V H, Hof A J, Kranenburg H V, et al. Copper chemical mechanical polishing usinga slurry-free technique [J]. Microelectron Eng, 2001, 55(1/4): 305-312.[7] van der Velden P. Chemical mechanical polishing with fixed abrasives using different subpadsto optimize wafer uniformity [J]. Microelectron Eng, 2000, 50(1/4): 41-46.[8] Hayashi Y, Kikuta K, Kikkawa T. A new abrasive-free, chemical mechanical polishing techniquefor aluminum metallization of ULSI devices [C]// Proceedings of International ElectronDevices Meeting (IEDM). 1992: 976-978.[9] Wang Z J, Lei H, Zhang W T, et al. Cu (II) as a catalyst for hydrogen peroxide systemabrasive-free polishing on hard disk substrate [J]. Key Eng Mater, 2013, 562/565: 91-95.[10] Zhang W T, Lei H. Abrasive-free polishing of hard disk substrate with H2O2-K2S2O8-NaHSO3slurry [J]. Adv Mater Res, 2013, 690/693: 3209-3212.[11] ZhangWT, Lei H. Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5slurry [J]. Friction, 2013, 1(4): 359-366.[12] Costa C, Santos V H S, Araujo P H H, et al. Rapid decomposition of a cationic azo-initiatorunder microwave irradiation [J]. J Appl Polym Sci, 2010, 118(3): 1421-1429.[13] Czech Z, Butwin A, Herko E, et al. Novel azo-peresters radical initiators used for the synthesisof acrylic pressure-sensitive adhesives [J]. Express Polymer Letters, 2008, 2(4): 277-283.[14] Demirci S, Caykara T. Controlled grafting of cationic poly [(ar-vinylbenzyl) trimethylammoniumchloride] on hydrogen-terminated silicon substrate by surface-initiated RAFT polymerization[J]. React Funct Polym, 2012, 72(9): 588-595.[15] Hariharaputhiran M, Zhang J, Ramarajan S, et al. Hydroxyl radical formation in H2O2-amino acid mixtures and chemical mechanical polishing of Copper [J]. J Electrochem Soc, 2000,147(10): 3820-3826.[16] Lu J, Garland J E, Pettit C M, et al. Relative role of H2O2 and glycine in CMP of copperstudied with impedance spectroscopy [J]. J Electrochem Soc, 2004, 151(10): 717-722.[17] Kang M C, Nam H S, Won H Y, et al. Effects of OH radicals on formation of Cu oxide andpolishing performance in Cu chemical mechanical polishing [J]. Electrochem Solid-State Lett,2008, 11(2): 32-35.[18] Peddeti S, Ong P, Leunissen L H A, et al. Chemical mechanical polishing of Ge using colloidalsilica particles and H2O2 [J]. Electrochem Solid-State Lett, 2011, 14(7): 254-257.[19] Lei H. Properties of surface oxidation film in CMP of computer hard disk substrate [J]. Chin JInorg Chem, 2009, 25(2): 206-212.[20] Li J, Liu Y H, Pan Y, et al. Chemical roles on Cu-slurry interface during copper chemicalmechanical planarization [J]. Appl Surf Sci, 2014, 293: 287-292. |