二维半导体MoTe2的极性调控与可重构电子器件中的应用

doi:10.12066/j.issn.1007-2861.2706

Abstract

Abstract: To explore the carrier polarity modulation of two-dimensional semiconductor molybdenum ditelluride (MoTe₂) and its applications in reconfigurable electronic devices, a dual-gate field-effect transistor (FET) based on a tantalum oxide (TaO_x)/MoTe₂/hexagonal boron nitride (h-BN) heterostructure was constructed. The reversible polarity control of MoTe₂ is achieved via charge trapping/detrapping effects at the TaO_x/MoTe₂ interface under the gate electric field. The results demonstrate that the carrier polarity in MoTe₂ can be modulated reversibly by controlling pulse polarity and amplitude of control gate (CG). A negative pulse voltage weakens the p-type characteristics and promotes the ntype characteristics of MoTe₂. Conversely, a positive pulse voltage enhances the p-type while suppressing the n-type behavior. Notably, this modulation effect becomes more pronounced with increasing voltage amplitudes. Based on this method, a logic inverter was successfully fabricated via programming two series-connected MoTe₂ transistors into n-type and p-type, respectively. This strategy of polarity modulation in two-dimensional semiconductors through interface charge trapping effects is considered to provide a novel idea for developing functionally reconfigurable electronic devices.

Key words: two-dimensional semiconductors, MoTe₂, polarity control, reconflgurable electronic devices, logic inverters

CLC Number:

HE Xiaoqian, GOU Xiaoshuang, SUN Fuqin, ZHAO Zhanxia, WANG Xiaowei, ZHANG Ting. Polarity control of two-dimensional semiconductor MoTe₂ and its applications in reconfigurable electronics[J]. Journal of Shanghai University（Natural Science Edition）, 2026, 32(1): 44-53.

References

[1] Fei W, Trommer J, Lemme M C, et al. Emerging reconflgurable electronic devices based on two-dimensional materials: a review [J]. InfoMat, 2022, 4(10): e12355.
[2] Zhang H T, Park T J, Islam A N M N, et al. Reconflgurable perovskite nickelate electronics for artificial intelligence [J]. Science, 2022, 375(6580): 533-539.
[3] Park Y J, Sharma B K, Shinde S M, et al. All MoS₂-based large area, skin-attachable active-matrix tactile sensor [J]. ACS Nano, 2019, 13(3): 3023-3030.
[4] Oh J Y, Bao Z. Second skin enabled by advanced electronics [J]. Advanced Science, 2019, 6(11): 1900186.
[5] Choi M, Park Y J, Sharma B K, et al. Flexible active-matrix organic light-emitting diode display enabled by MoS₂ thin-film transistor [J]. Science Advances, 2018, 4(4): eaas8721.
[6] Shawkat M S, Chung H S, Dev D, et al. Two-dimensional/three-dimensional Schottky junction photovoltaic devices realized by the direct CVD growth of vdW 2D PtSe₂ layers on silicon [J]. ACS Applied Materials & Interfaces, 2019, 11(30): 27251-27258.
[7] Peng R, Wu Y, Wang B, et al. Programmable graded doping for reconflgurable molybdenum ditelluride devices [J]. Nature Electronics, 2023, 6(11): 852-861.
[8] Sun X, Zhu C, Liu H, et al. Contact and injection engineering for low SS reconflgurable FETs and high gain complementary inverters [J]. Science Bulletin, 2020, 65(23): 2007-2013.
[9] Larentis S, Fallahazad B, Movva H C P, et al. Reconflgurable complementary monolayer MoTe₂ field-effect transistors for integrated circuits [J]. ACS Nano, 2017, 11(5): 4832-4839.
[10] Wang Z, Xia H, Wang P, et al. Controllable doping in 2D layered materials [J]. Advanced Materials, 2021, 33(48): 2104942.
[11] Resta G V, Balaji Y, Lin D, et al. Doping-free complementary logic gates enabled by twodimensional polarity-controllable transistors [J]. ACS nano, 2018, 12(7): 7039-7047.
[12] Wu P, Reis D, Hu X S, et al. Two-dimensional transistors with reconflgurable polarities for secure circuits [J]. Nature Electronics, 2021, 4(1): 45-53.
[13] Wu P, Ameen T, Zhang H, et al. Complementary black phosphorus tunneling field-effect transistors [J]. ACS nano, 2018, 13(1): 377-385.
[14] Hu W, Sheng Z, Hou X, et al. Ambipolar 2D semiconductors and emerging device applications [J]. Small Methods, 2021, 5(1): 2000837.
[15] Yu W J, Kim U J, Kang B R, et al. Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors [J]. Nano Letters, 2009, 9(4): 1401-1405.
[16] Lin Y F, Xu Y, Wang S T, et al. Ambipolar MoTe₂ transistors and their applications in logic circuits [J]. Advanced Materials, 2014, 26(20): 3263-3269.
[17] Nakaharai S, Yamamoto M, Ueno K, et al. Electrostatically reversible polarity of ambipolar fi-MoTe₂ transistors [J]. ACS Nano, 2015, 9(6): 5976-5983.
[18] Ren Y, Yang X, Zhou L, et al. Recent advances in ambipolar transistors for functional applications [J]. Advanced Functional Materials, 2019, 29(40): 1902105.
[19] Beck M E, Hersam M C. Emerging opportunities for electrostatic control in atomically thin devices [J]. ACS Nano, 2020, 14(6): 6498-6518.
[20] Cristoloveanu S, Lee K H, Park H, et al. The concept of electrostatic doping and related devices [J]. Solid-State Electronics, 2019, 155: 32-43.
[21] Wang J, Fang H, Wang X, et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared [J]. Small, 2017, 13(35): 1700894.
[22] Chen J, Zhu J, Wang Q, et al. Homogeneous 2D MoTe₂ CMOS inverters and p-n junctions formed by laser-irradiation-induced p-type doping [J]. Small, 2020, 16(30): 2001428.
[23] Luo P, Zhuge F, Zhang Q, et al. Doping engineering and functionalization of two-dimensional metal chalcogenides [J]. Nanoscale Horizons, 2019, 4(1): 26-51.
[24] Nipane A, Karmakar D, Kaushik N, et al. Few-layer MoS₂ p-type devices enabled by selective doping using low energy phosphorus implantation [J]. ACS Nano, 2016, 10(2): 2128-2137.
[25] Liu J, Jiang J, Zhou Q, et al. Manipulation of π-aromatic conjugation in two-dimensional Sn-organic materials for e-cient lithium storage [J]. eScience, 2023, 3(2): 100094.
[26] Dolui K, Rungger I, Das Pemmaraju C, et al. Possible doping strategies for MoS₂ monolayers: an ab initio study [J]. Physical Review B, 2013, 88(7): 075420.
[27] Yamamoto M, Nakaharai S, Ueno K, et al. Self-limiting oxides on WSe₂ as controlled surface acceptors and low-resistance hole contacts [J]. Nano Letters, 2016, 16(4): 2720-2727.
[28] Liu X, Qu D, Yuan Y, et al. Self-terminated surface monolayer oxidation induced robust degenerate doping in MoTe₂ for low contact resistance [J]. ACS Applied Materials & Interfaces, 2020, 12(23): 26586-26592.
[29] Hu H, Shi Z, Khan K, et al. Recent advances in doping engineering of black phosphorus [J]. Journal of Materials Chemistry A, 2020, 8(11): 5421-5441.
[30] Chamlagain B, Cui Q, Paudel S, et al. Thermally oxidized two-dimensional TaS₂ as a high-k gate dielectric for MoS₂ field-effect transistors [J]. 2D Materials, 2017, 4: 031002.
[31] Lan C, Kang X, Meng Y, et al. The origin of gate bias stress instability and hysteresis in monolayer WS₂ transistors [J]. Nano Research, 2020, 13: 3278-3285.
[32] Zheng Y, Gao J, Han C, et al. Ohmic contact engineering for two-dimensional materials [J]. Cell Reports Physical Science, 2021, 2(1): 100298.
[33] Xiao B, Watanabe S. Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study [J]. Nanoscale, 2014, 6(17): 10169-10178.
[34] Cai Q, Chen J, Liu S, et al. High dielectric response of TaOx thin film and its modiflcation by controlling oxygen vacancy concentration [J]. Journal of Materials Science: Materials in Electronics, 2023, 34(11): 969.

Polarity control of two-dimensional semiconductor MoTe₂ and its applications in reconfigurable electronics

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Polarity control of two-dimensional semiconductor MoTe₂ and its applications in reconfigurable electronics