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Journal of Shanghai University（Natural Science Edition） ›› 2017, Vol. 23 ›› Issue (3): 414-421.doi: 10.12066/j.issn.1007-2861.1845

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Effect of cold rolling reduction on deformation and annealing behavior of triple junctions and grain boundaries in high-purity aluminum

YIN Wenhong1,2, WANG Weiguo2,3, FANG Xiaoying2, QIN Congxiang2   

  1. 1. Institute of Materials Science, Shanghai University, Shanghai 200072, China;
    2. School of Mechanical Engineering, Shandong University of Technology, Zibo 255049, Shandong, China;
    3. School of Materials Science and Engineering, Fujian University of Technology, Fuzhou 350118, China
  • Received:2016-08-31 Online:2017-06-30 Published:2017-06-30

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Abstract:

Grain orientations and grain boundary migrations near triple junctions in a high purity aluminum were analyzed by electron backscattered diffraction (EBSD). The
results indicate that good correlations exist between the Schmid factors and Taylor factors and misorientation values of the point in grains near triple junctions in deformed samples to the original point. Grains with higher Schmid factors or lower Taylor factors typically correspond to higher misorientation values near the triple junctions. The largest misorientation increases with the increasing degree of deformation. In subsequent annealing at 400°C for 15 min, both grain boundaries and triple junctions migrate, and the former leaves ghost lines. During such migration, in general, a grain boundary grows from the grain with a lower Schmid factor into that with a higher Schmid factor, that is, a hard crystal grows into an adjacent soft crystal. Usually, the amount of migration of a grain boundary is considerably greater than that of a triple junction in light deformation, and the grain boundary becomes more curved after migration. The grain boundary migrates further during the second annealing at 400°C for 17 min to reduce the residual strain energy.

Key words: electron backscattered diffraction (EBSD), ghost line, grain boundary, triple junction, metal material