基于0.35 μm BCD 工艺下50 V HVPMOS 的电学性能优化
邹荣1, 闵嘉华1, 储楚2, 梁小燕1, 张涛1, 滕家琪1
Electrical Properties Optimization of 50 V HVPMOS Based on 0.35 μm BCD Process
ZOU Rong1, MIN Jia-hua1, CHU Chu2, LIANG Xiao-yan1, ZHANG Tao1, TENG Jia-qi1
上海大学学报(自然科学版)
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2013, (6): 567
-571
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DOI: 10.3969/j.issn.1007-2861.2013.06.004
