介绍一种使用快速热退火设备，经多次循环退火诱导，在普通玻璃衬底上生长非晶硅薄膜晶化的实验方法.利用拉曼（Raman）光谱、原子力显微镜（atomic force microscope,AFM）、紫外可见分光光度计（UV-VIS spectrophotometer）和霍尔（Hall）测试系统对薄膜的结构、形貌及电子迁移率进行测试.结果表明，当退火温度达到680 ℃时，薄膜开始出现晶化现象；随着快速热退火次数的增加，拉曼光谱在500 cm^-1处测得多晶硅特征峰；在循环退火5次后，其最佳晶化率达到71.9%，光学带隙下降，晶粒增大，载流子迁移率提高.

This paper introduces a method of multicycle rapid thermal annealing that induces crystallization of amorphous silicon films deposited on the normal glass. The structure, surface morphology and electron mobility of the silicon films were investigated with Raman spectra, atomic force microscope (AFM), UV-VIS spectrophotometer and Halleffect measurements. The results show that the crystallization appears for films annealed at 680 ℃. As rapid thermal annealing cycles are increased, the Raman spectra indicate that the characteristic peak of polycrystalline silicon (poly-Si) film appears at 500 cm^-1. The maximal crystalline fraction of polySi film is 71.9% after 5 cycles annealing treatment. The optical band gap decreases with the grain growing, and the carrier mobility increases.