采用离子束辅助沉积 (ion beam-assisted deposition, IBAD) 技术在非织构的金属基带上沉积双轴织构的 MgO 薄膜, 研究了不同 Ar⁺ 离子束流能量对 MgO 双轴织构和表面形貌的影响. 结果表明: 在 700∼1 000 eV 离子能量范围内, MgO 薄膜的双轴织构随离子能量的增加而改善; 在 1 000 eV 离子能量下, IBAD-MgO 薄膜的面内半高全宽 (full-width at half-maximum, FWHM) ∆ϕ 和面外 FWHM ∆ω 分别为 6^◦ 和 2^◦; 随着离子能量的增加, MgO 薄膜的表面形貌并无明显区别, 其表面粗糙度(5 µm×5 µm) 均方根(root mean square, RMS) 均在 5∼6 nm. 该研究证明了较高的 Ar⁺ 离子束能量可以提高 IBAD-MgO 薄膜的织构质量, 对于双轴织构薄膜的稳定制备具有重要意义.

Biaxially textured MgO films were deposited on nontextured metal tapes via ion beam-assisted deposition (IBAD), and the effects of different ion beam energies on the biaxial texture and surface morphology of MgO were investigated. The results indicated that an increase in the ion energy in the range of 700∼1 000 eV contributed to the optimization of the texture quality of IBAD-MgO. Biaxially textured MgO films with an in-plane full-width at half-maximum (FWHM) ∆ϕ and out-of-plane FWHM ∆ω of 6^◦ and 2^◦, respectively, were obtained at 1 000 eV. In addition, the surface morphology of the MgO films did not differ significantly with an increase in the ion energy, and the root mean square (RMS) values of surface roughness (5 µm×5 µm) was in the range of 5∼6 nm. This study demonstrated that a higher Ar⁺ ion beam energy could improve the texture quality of IBAD-MgO films, which was important for the stable preparation of biaxially textured films.