无掩模选择性制备硅纳米线阵列及其光致发光

doi:10.3969/j.issn.1007-2861.2014.01.002

上海大学学报(自然科学版) ›› 2014, Vol. 20 ›› Issue (6): 689-693.doi: 10.3969/j.issn.1007-2861.2014.01.002

无掩模选择性制备硅纳米线阵列及其光致发光

张帅1, 2, 吕文辉2, 史伟民1, 黄璐1, 杨伟光1, 刘进1

1. 上海大学材料科学与工程学院, 上海200072; 2. 湖州师范学院理学院, 浙江湖州313000

出版日期:2014-12-23 发布日期:2014-12-23
通讯作者: 史伟民(1951—), 男, 教授, 博士生导师, 研究方向为电子材料与元器件. E-mail: E-mail: wmshi@mail.shu.edu.cn
作者简介:史伟民(1951—), 男, 教授, 博士生导师, 研究方向为电子材料与元器件. E-mail: wmshi@mail.shu.edu.cn
基金资助:
国家自然科学基金资助项目(61204068); 中国科学院光电材料化学与物理重点实验室基金资助项目
(2008DP173016); 浙江大学硅材料国家重点实验室开放课题资助项目(SKL2010-5); 湖州师范学院
科研基金资助项目(2014XJKY48)

Maskless Selective Fabrication and Photoluminescence
of Patterned Si Nanowire Arrays

ZHANG Shuai-1, 2 , LV Wen-Hui-2, SHI Wei-Min-1, HUANG Lu-1, YANG Wei-Guang-1, LIU Jin-1

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
2. School of Science, Huzhou University, Huzhou 313000, Zhejiang, China

Online:2014-12-23 Published:2014-12-23

摘要/Abstract

摘要： 基于金属辅助硅化学刻蚀发展了一种无掩模选择性区域制备硅纳米线阵列的方法, 并利用该方法成功制备了图形化的硅纳米线阵列. 扫描电子显微镜(scanning electron microscope, SEM) 分析表明, 所制备的硅纳米线阵列是高质量的多孔微纳米结构, 并利用拉曼光谱仪研究了室温下硅纳米线阵列的光致发光特性. 结果表明, 硅纳米线阵列可实现有效的光发射, 发光波峰为663 nm. 该方法工艺简单、有效, 可潜在地应用于构筑硅基光电集成器件.

关键词: 光致发光, 硅纳米线阵列, 无掩模工艺

Abstract: A reasonable selective maskless etching process is developed to fabricate patterned Si nanowire arrays on the basis of metal-assisted silicon chemical etching. The patterned Si nanowire arrays are successfully fabricated in a selective maskless etching process. The surface morphology and photoluminescence of the patterned Si nanowire arrays are characterized by a scanning electron microscope (SEM) and a Raman spectrometer. It is indicated that patterned Si nanowire arrays are high quality porous micro- and nanostructured arrays. The photoluminescence of patterned Si nanowire arrays reveals that a strong light emission peak at 663 nm is obtained. Results show that a simple and efficient process to fabricate patterned Si nanowire arrays for Si-based optoelectronic integrated devices can be obtained.

Key words: maskless process, photoluminescence, Si nanowire array

中图分类号:

TN 40

张帅1, 2, 吕文辉2, 史伟民1, 黄璐1, 杨伟光1, 刘进1. 无掩模选择性制备硅纳米线阵列及其光致发光[J]. 上海大学学报(自然科学版), 2014, 20(6): 689-693.

ZHANG Shuai-1, 2 , LV Wen-Hui-2, SHI Wei-Min-1, HUANG Lu-1, YANG Wei-Guang-1, LIU Jin-1. Maskless Selective Fabrication and Photoluminescence
of Patterned Si Nanowire Arrays[J]. Journal of Shanghai University（Natural Science Edition）, 2014, 20(6): 689-693.

参考文献

[1] Cullis A G, Canham L T. Visible light emission due to quantum size effects in highly porous

crystalline silicon [J]. Nature, 1991, 353: 335-338.

[2] Guichard A R, Barsic D N, Sharma S, et al. Tunable light emission from quantum-confined

excitons in TiSi2-catalyzed silicon nanowires [J]. Nano Lett, 2006, 6: 2140-2144.

[3] Hochbaum A I, Fan R, He R R, et al. Controlled growth of Si nanowire arrays for device

integration [J]. Nano Lett, 2005, 5: 457-460.

[4] Hsu C M, Connor S T, Tang M X, et al. Wafer-scale silicon nanopillars and nanocones by

Langmuir-Blodgett assembly and etching [J]. Appl Phys Lett, 2008, 93: 133109.

[5] Peng K Q, Hu J J, Yan Y J, et al. Fabrication of single-crystalline silicon nanowires by

scratching a silicon surface with catalytic metal particles [J]. Adv Funct Mater, 2006, 16: 387-

394.

[6] Peng K Q, Lu A J, Zhang R Q, et al. Motility of metal nanoparticles in silicon and induced

anisotropic silicon etching [J]. Adv Funct Mater, 2008, 18: 3026-3035.

[7] 吕文辉, 张帅. 金属辅助硅化学刻蚀法可控制备硅纳米线阵列[J]. 半导体光电, 2011, 32: 363-397.

[8] 余金钟. 硅光子学的研究和发展趋势[J]. 激光与光电子学进展, 2006, 43: 68-71.

[9] Zhang M L, Peng K Q, Fan X, et al. Preparation of large-area uniform silicon nanowires

arrays through metal-assisted chemical etching [J]. J Phys Chem C, 2008, 112: 4444-4450.

[10] Cullis A G, Canham L T, Calcott P D J. The structural and luminescence properties of

porous silicon [J]. J Appl Phys, 1997, 82: 909-965.

[11] Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution

of wafers [J]. Appl Phys Lett, 1990, 57: 1046-1048.

[12] Lehmann V, Gijsele U. Porous silicon formation: a quantum wire effect [J]. Appl Phys Lett,

1991, 58: 856-858.

[13] Hochbaum A I, Chen R, Delgado R D, et al. Enhanced thermoelectric performance of rough

silicon nanowires [J]. Nature, 2008, 451: 163-168.

[14] Chern W, Hsu K, Chun I S, et al. Nonlithographic patterning and metal-assisted chemical

etching for manufacturing of tunable light-emitting silicon nanowire arrays [J]. Nano Lett, 2010,

10: 11582-11588.

无掩模选择性制备硅纳米线阵列及其光致发光

Maskless Selective Fabrication and Photoluminescence
of Patterned Si Nanowire Arrays

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无掩模选择性制备硅纳米线阵列及其光致发光

Maskless Selective Fabrication and Photoluminescence of Patterned Si Nanowire Arrays

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Maskless Selective Fabrication and Photoluminescence
of Patterned Si Nanowire Arrays