电子束辐照对 β-Zn4Sb3 薄膜微结构和热电功率因子的影响

doi:10.12066/j.issn.1007-2861.2168

上海大学学报(自然科学版) ›› 2020, Vol. 26 ›› Issue (6): 937-944.doi: 10.12066/j.issn.1007-2861.2168

电子束辐照对 β-Zn₄Sb₃ 薄膜微结构和热电功率因子的影响

高鹏飞, 欧正海, 秦娟(), 史伟民, 王林军

上海大学材料科学与工程学院, 上海 200444

收稿日期:2018-05-13 出版日期:2020-12-31 发布日期:2020-12-29
通讯作者: 秦娟 E-mail:juan_qin@staff.shu.edu.cn
作者简介:秦娟(1976—), 女, 讲师, 博士, 研究方向为光电-热电半导体材料.E-mail: juan_qin@staff.shu.edu.cn
基金资助:
国家自然科学基金资助项目(11374228)

Effects of electron beam irradiation on microstructures and thermoelectric power factors of β-Zn₄Sb₃ thin films

GAO Pengfei, OU Zhenghai, QIN Juan(), SHI Weimin, WANG Linjun

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

Received:2018-05-13 Online:2020-12-31 Published:2020-12-29
Contact: QIN Juan E-mail:juan_qin@staff.shu.edu.cn

摘要/Abstract

摘要：

通过射频磁控溅射制备 Zn-Sb 预沉积薄膜, 随后依次进行 0~800 kGy 不同剂量的电子束辐照处理和常规热退火, 获得 β-Zn₄Sb₃ 热电薄膜. 利用 X 射线衍射仪 (X-raydiffraction, XRD) 和场发射扫描电子显微镜 (field emission scanningelectron microscopy, FESEM) 分析表征了薄膜的微结构和表面形貌,利用 Hall 效应和 Seebeck 效应检测了薄膜的电输运和热电性能.研究结果表明, 所有样品均表现出 p 型导电.经电子束辐照处理的薄膜样品, 其物相组成没有发生变化,平均晶粒尺寸变化不大, 但薄膜表面的致密度有所提高,且晶粒生长表现出一定的 (223) 晶面取向性生长.当电子束辐照剂量为 200 kGy 时,由于在电导率降幅很小的同时 Seebeck 系数得到了有效的提高,故样品的功率因子可达 6.90 μW/(cm·K²),比未进行电子束辐照处理的样品提高了 41.7%.

关键词: 热电, β-Zn₄Sb₃薄膜, 磁控溅射, 电子束辐照, 功率因子

Abstract:

In this study, β-Zn₄Sb₃ thermoelectric thin films were fabricated by radio-frequency magnetron sputtering with subsequent electron beam (EB) irradiation with different doses of 0~800 kGy and thermal annealing. The microstructures and surface morphologies of the films were characterised by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The electrical transport and thermoelectric properties of the films were analysed by Hall effect and Seebeck effect measurements. All samples exhibited p-type conduction characteristics. The phase compositions and average grain sizes of the samples subjected to EB irradiation slightly changed, the film surface was more densely compacted, and the grain growth exhibited a preferred orientation along the (223) crystallographic plane. When the EB irradiation dose was 200 kGy, the power factor of the sample reached 6.90 μW/(cm·K²) as the Seebeck coefficient was effectively increased while the conductivity was slightly reduced. This power factor was increased by 41.7% compared to that of the sample without EB irradiation.

Key words: thermoelectric, β-Zn₄Sb₃ thin film, magnetron sputtering, electron beam irradiation, power factor

中图分类号:

TB33

高鹏飞, 欧正海, 秦娟, 史伟民, 王林军. 电子束辐照对 β-Zn₄Sb₃ 薄膜微结构和热电功率因子的影响[J]. 上海大学学报(自然科学版), 2020, 26(6): 937-944.

GAO Pengfei, OU Zhenghai, QIN Juan, SHI Weimin, WANG Linjun. Effects of electron beam irradiation on microstructures and thermoelectric power factors of β-Zn₄Sb₃ thin films[J]. Journal of Shanghai University（Natural Science Edition）, 2020, 26(6): 937-944.

图/表 4

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电子束辐照对 β-Zn₄Sb₃ 薄膜微结构和热电功率因子的影响

Effects of electron beam irradiation on microstructures and thermoelectric power factors of β-Zn₄Sb₃ thin films

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