内存空间在双空间存储器上的推移技术实验

doi:10.3969/j.issn.1007-2861.2015.01.017

上海大学学报(自然科学版) ›› 2017, Vol. 23 ›› Issue (2): 201-215.doi: 10.3969/j.issn.1007-2861.2015.01.017

内存空间在双空间存储器上的推移技术实验

展豪君, 金翊, 欧阳山, 石也强

上海大学计算机工程与科学学院, 上海 200444

收稿日期:2015-04-18 出版日期:2017-04-30 发布日期:2017-04-30
通讯作者: 金翊(1957—), 男, 教授, 博士生导师, 博士, 研究方向为三值光学计算机. E-mail: yijin@shu.edu.cn
作者简介:金翊(1957—), 男, 教授, 博士生导师, 博士, 研究方向为三值光学计算机. E-mail: yijin@shu.edu.cn
基金资助:
国家自然科学基金青年科学基金资助项目(61103054); 上海市自然科学基金资助项目(15ZR1415400, 13ZR1416000); 上海市教委科研创新资助项目(13ZZ074, 13YZ005)

Experiment of memory space move technique for double-space storage

ZHAN Haojun, JIN Yi, OUYANG Shan, SHI Yeqiang

School of Computer Engineering and Science, Shanghai University, Shanghai 200444, China

Received:2015-04-18 Online:2017-04-30 Published:2017-04-30

摘要/Abstract

摘要：

详细介绍双空间存储器理论和其核心技术——内存空间推移技术的仿真实验. 证实了用非易失性随机存储器(non-volatile random access memory, NVRAM) 构建双空间存储器的可行性, 同时通过对8086CPU 系统的仿真实验, 证实了将内存空间在双空间存储器上推移之技术的正确性. 实验设置的目标系统包含一个8086CPU, 16 MB 的双空间存储器和16 个8位的推移锁存器. 目标系统中设置了2个不可闭窗和14 个可推移的窗框, 在不可闭的255 号窗壁中设置了8086CPU 的首指令和初始化程序, 在不可闭的254 号窗壁设置了8086CPU 的中断向量表和双空间存储器的推移向量表. 实验完成了8086CPU 的上电过程、自动执行初始化程序、正确执行中断命令、正确执行数据读写命令等操作, 并将CPU 对其1 MB 内存空间的随机读写访问自动落实为对16 MB 双空间存储器指定位置的实时随机访问; 实验还完成了随时修改推移锁存器的操作, 并以此将对应的窗框推移到了双空间存储器的任意位置. 实验结果为双空间存储器理论和内存空间推移技术奠定了基础.

关键词: 非易失性随机存储器(non-volatile random access memory, NVRAM) , 内存推移, 双空间存储器

Abstract:

This work presents an emulation experiment for double-space storage principle and the memory space move technique. The experiment validate feasibility of using nonvolatile random access memory (NVRAM) to build a double-space storage and correctness of the memory space movement technique. The experiment system consists of an 8086CPU, 16 MB double-space storage, and sixteen 8-bit move latches. Two unmovable and fourteen movable window frames are set up. The first instruction and initial program are set in the 255th window that cannot be closed. An interrupt vector table and a move vector table are set in the 254th unclosed window. It has been make sure that the 8086CPU is booted properly, and the initial program, interrupt service routine, read and write memory instruction are executed correctly. Further, access to the 8086CPU’s 1 MB memory can be automatically transformed to the 16 MB double-space memory unit, and the move latches can be modified to map the window frame into a new window wall of the double-space storage. The experimental results lay a foundation for the double-space memory principle and its memory space move technique.

Key words: memory space move, non-volatile random access memory (NVRAM) , double-space storage

展豪君, 金翊, 欧阳山, 石也强. 内存空间在双空间存储器上的推移技术实验[J]. 上海大学学报(自然科学版), 2017, 23(2): 201-215.

ZHAN Haojun, JIN Yi, OUYANG Shan, SHI Yeqiang. Experiment of memory space move technique for double-space storage[J]. Journal of Shanghai University（Natural Science Edition）, 2017, 23(2): 201-215.

参考文献

[1] Jin Y, He H C, Lü Y T. Ternary optical computer architecture [J]. Physica Scripta, 2005, T118: 98-101.
[2] 金翊. 走近光学计算机[J]. 上海大学学报(自然科学版), 2011, 17(4): 401-411.
[3] 金翊, 王宏健, 欧阳山, 等. 可重构三值光学处理器的原理、基本结构和实现[J]. 中国科学: 信息科学, 2012, 42(6): 778-788.
[4] 谌章义. 千位三值光学处理器理论、结构和实现[D]. 上海: 上海大学, 2010.
[5] 金翊. 三值光计算机高数据宽度的管理策略[J]. 上海大学学报(自然科学版), 2007, 13(5): 519-523.

[6] 李梅, 金翊, 何华灿, 等. 基于三值逻辑光学处理器实现向量矩阵乘法[J]. 计算机应用研究, 2009, 26(8): 2839-2841.
[7] Wang, X C, Peng J J, Jin Y, et al. Vector-matrix multiplication based on a ternary optical computer [M]// High performance computing and applications. Berlin: Springer-Verlag, 2009: 426-432.
[8] Simpson R E, Fons P, Kolobov A V, et al. Interfacial phase-change memory [J]. Nature Nanotechnology, 2011, 6(8): 501-505.
[9] Wong H S P, Raoux S, Kim S B, et al. Phase change memory [J]. Proceedings of the IEEE, 2010, 98(12): 2201-2227.
[10] Lai S. Current status of the phase change memory and its future [C]// Electron Devices Meeting. 2003, DOI: 10.1109/IEDM.2003.1269271.
[11] Takashima D, Kunishima I. High-density chain ferroelectric random access memory (CFRAM) [J]. IEEE Journal of Solid-State Circuits, 1998, 33(5): 787-792.
[12] Evans J, Montross N, Salazar G, et al. A discrete ferroelectric memory [C]// Non-Volatile Memory Technology Symposium. 2012, DOI: 10.1109/NVMTS.2013.6632857.
[13] Tehrani S, Slaughter J M, Chen E, et al. Progress and outlook for MRAM technology [J]. IEEE Transactions on Magnetics, 1999, 35(5): 2814-2819.
[14] Yoda H, Fujita S, Shimomura N, et al. Progress of STT-MRAM technology and the effect on normally-off computing systems [C]// Electron Devices Meeting. 2012, DOI:10.1109/IEDM.2012.6479023.
[15] Zhuang W W, Pan W, Ulrich B D, et al. Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM) [C]// International Electron Devices Meeting. 2002, DOI: 10.1109/IEDM.2002.1175811.
[16] Chen Y C, Chen C F, Chen C T, et al. An access-transistor-free (0T/1R) nonvolatile resistance random access memory (RRAM) using a novel threshold switching, selfrectifying chalcogenide device [C]// IEEE International Electron Devices Meeting. 2004, DOI: 10.1109/IEDM.2003.1269425.
[17] Jedec. DDR4 SDRAM standard [EB/OL]. (2015-03-20) [2017-01-15]. http: //www. jedec. org/standards-documents/docs/jesd79-4a.
[18] Agiga. AGIGARAM® DDR4 NVDIMM [EB/OL]. (2015-05-20) [2017-01-15]. http: //www. agigatech. com/ddr4. php.
[19] 金翊, 欧阳山, 沈云付, 等. 一种计算机系统和数据读写方法: 201410199434.9 [P]. 2012-04-05.
[20] 顾晖, 梁惺彦. 微机原理与接口技术——基于8086 和Proteus 仿真[M]. 北京: 电子工业出版社, 2011: 177-288.
[21] Brey B B. Intel 微处理器[M]. 金惠华, 艾明晶, 尚利宏, 等译. 北京: 机械工业出版社, 2010: 287-309.
[22] Intel. Hexadecimal object file format specification [EB/OL]. (2015-01-18) [2017-01-15]. http://microsym.com/editor/assets/intelhex. pdf.

内存空间在双空间存储器上的推移技术实验

Experiment of memory space move technique for double-space storage

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