A porous silicon (PSi) process for realizing controllable micro-to-nano scale features after focused ion beam (FIB) treatment is reported. An area, in which electrochemical etching is suppressed, therefore termed a shielding area, exists around the patterns treated by FIB. The area is formed due to a secondary knocked-on effect in the FIB process. The size of the shielding area is positively related to the energy used in FIB and resistivity of the silicon substrate. The shielding area on PSi has a width of 14 μm. The circular feature of PSi with a diameter as large as 10 μm is reported here for the first time. Inside the area no pores appear, while outside the shielding area remains.
WANG Jing-jie1,2, XU Jia-qiang1, JIAO Ji-wei2
. Effect on Electrochemical-Made Porous Silicon by FIB Etching[J]. Journal of Shanghai University, 2014
, 20(3)
: 355
-361
.
DOI: 10.3969/j.issn.1007-2861.2013.07.036
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