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Journal of Shanghai University >

2013 , Vol. 19 >Issue 5: 459 - 464

DOI: https://doi.org/10.3969/j.issn.1007-2861.2013.05.004

Environmental and Chemical Engineering

Growth Behavior of Orthorhombic SnO2 Induced by Mn-Doped SnO2

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  • Applied Radiation Institute, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, China

Received date: 2013-04-21

  Online published: 2013-10-28

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Abstract

Tin dioxide (SnO2) is an n-type semiconductor material with tetragonal rutile crystal structure under normal conditions and displays many interesting physical and chemical properties. Another form of SnO2 with an orthorhombic crystal structure is known to be stable only at high pressures and temperatures. However, there are limited reports on effects of Mn-doped tetragonal phase SnO2 on micro/nanostructured characteristics. In this article, micro/nanostructures of Mn-doped tetragonal phase SnO2  have been successfully prepared with a chemical co-precipitation method. The micro/nanostructural evolution of Mn-doped tetragonal phase SnO2 under different heat treatment temperatures is evaluated with X-ray diffraction (XRD) and a high-resolution transmission electron microscopy (HRTEM). It is surprisingly found that the orthorhombic phase SnO2  is formed in Mn-doped tetragonal phase SnO2 . The obvious diffraction peaks and clear lattice fringes confirm that the orthorhombic phase SnO2  nanocrystals evidently exist in Mn-doped SnO2 samples. Experimental results indicate that the XRD peak intensities and crystal planes of the orthorhombic phase SnO2  decrease with increasing of heat treatment temperatures. Formation of orthorhombic phase SnO2 is attributed to the lattice distortion of tetragonal phase SnO2 due to the Mn-doped tetragonal phase SnO2.

Key words： lattice distortion; micro-nanostructure; orthorhombic; tetragonal; tin dioxide (SnO2)

Cite this article

WANG Li-jun, CHEN Chen, LIU Yan-yu, CHEN Zhi-wen . Growth Behavior of Orthorhombic SnO2 Induced by Mn-Doped SnO2[J]. Journal of Shanghai University, 2013 , 19(5) : 459 -464 . DOI: 10.3969/j.issn.1007-2861.2013.05.004

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