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Journal of Shanghai University >

2025 , Vol. 31 >Issue 4: 657 - 665

DOI: https://doi.org/10.12066/j.issn.1007-2861.2680

Quantum Science

Mechanism and prospects of room-temperature magnetoresistance effect in (Fe1-xNix)5+δGeTe2 single crystals

  • LONG Xiumin ,
  • PAN Haojie ,
  • CAO Guixin
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  • 1. Materials Genome Institute, Shanghai University, Shanghai 200444, China;
    2. Institute for Quantum Science and Technology, Shanghai University, Shanghai 200444, China

Received date: 2025-03-18

  Online published: 2025-09-16

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Abstract

According to reports, Ni-doped Fe$_{5}$GeTe$_{2}$ single crystals have a Curie temperature ($T_{\rm C}$) of up to 478 K. Given the great potential of room-temperature van der Waals (vdW) ferromagnetic materials in spintronics, a series of (Fe$_{1-x}$Ni$_{x})_{5+\delta }$GeTe$_{2}$ single crystals were formed via the chemical vapor transport (CVT) method, so as to investigate the effect of Ni doping on the room-temperature magnetoresistance (MR) effect of Fe$_5$GeTe$_2$ single crystals. Moreover, their magnetic properties and room-temperature MR changes with Ni doping were measured using a physical property measurement system (PPMS) and a magnetic property measurement system (MPMS). The results show that the room-temperature MR evolves from linear negative magnetoresistance (NMR) to two nonlinear NMR types and then to linear positive magnetoresistance (PMR) with increasing Ni content. The microscopic mechanisms of different MR effects and their prospects in spintronic devices were analyzed.

Key words： van der Waals (vdW) ferromagnetic material; Curie temperature; magnetoresistance (MR) effect; spintronics

Cite this article

LONG Xiumin , PAN Haojie , CAO Guixin . Mechanism and prospects of room-temperature magnetoresistance effect in (Fe1-xNix)5+δGeTe2 single crystals[J]. Journal of Shanghai University, 2025 , 31(4) : 657 -665 . DOI: 10.12066/j.issn.1007-2861.2680

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