Research Articles

1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings

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  • 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
    2. Patent Examination Cooperation Jiangsu Center of the Patent Office, National Intellectual Property Administration, Suzhou 215163, Jiangsu, China
    3. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China

Received date: 2017-11-08

  Online published: 2019-09-04

Abstract

An improved way of fabricating 1.3 $\mu$m distributed feedback (DFB) laser is presented to avoid overgrowth and deep etching. This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide. It is named laterally coupled DFB (LC-DFB) laser, whose properties is better than that of traditional DFB lasers. Two InAs/GaAs quantum dot (QD) samples, undoped QD and p-doped QD are prepared for DFB lasers. A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers. A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers. The index-coupled LC-DFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio (SMSR) of 51 dB. The laser also shows good wavelength stability against drive current and working temperature. The 1.3 $\mu$m InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics comunication.

Cite this article

Qizhu LI, Xia FU, Ziyang ZHANG, Xu WANG, Hongmei CHEN, Chuncai HOU, Yuanqing HUANG, Chunyang GUO, Jiahua MIN . 1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings[J]. Journal of Shanghai University, 2019 , 25(4) : 472 -483 . DOI: 10.12066/j.issn.1007-2861.1982

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