Journal of Shanghai University(Natural Science Edition) ›› 2024, Vol. 30 ›› Issue (5): 826-837.doi: 10.12066/j.issn.1007-2861.2601

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Progress on physical mechanics of van der Waals layered materials MoSi2N4 and their heterostructures

LI Xuanhao1,2 , YU Jin1,2   

  1. 1. School of Mechanics and Engineering Science, Shanghai University, Shanghai 200444, China; 2. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai University, Shanghai 200072, China
  • Online:2024-10-30 Published:2024-11-07

Abstract: Two-dimensional materials have attracted considerable attention because they exhibit various novel physical properties that differ from their three-dimensional parent materials. In 2020, MoSi2N4, a new van der Waals layered material without a corresponding parent material, was synthesized experimentally via chemical vapor deposition. Its advantages, such as high carrier mobility, excellent mechanical strength, high light transmittance, and good environmental stability, have attracted the interest of researchers. Moreover, because graphene/h-BN, MoS2/black phosphorus, and other heterostructures show intrinsic physical properties superior to those of the individual material, exploring the physical properties of MoSi2N4-based heterostructures has gradually become the focus of research. This paper focuses on recent research on this type of heterostructure. In particular, the regulation of its electronic properties under mechanical strain, which provides a guiding basis to improve the understanding of their physical and mechanical mechanisms and exploring the research on the van der Waals family MA2Z4 and its heterostructures.

Key words: layered van der Waals material, mechanical strain, electronic property; physical mechanics

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