收稿日期: 2016-07-11
网络出版日期: 2018-06-27
基金资助
国家自然科学基金资助项目(11072138);上海市自然科学基金资助项目(15ZR1426100)
KMC simulation for growth of InAs/GaAs quantum dots
Received date: 2016-07-11
Online published: 2018-06-27
陈龙, 徐凯宇 . InAs/GaAs量子点生长的KMC模拟[J]. 上海大学学报(自然科学版), 2018 , 24(3) : 367 -377 . DOI: 10.12066/j.issn.1007-2861.1866
The kinetic Monte Carlo (KMC) model is used to simulate the initial phase of the growth of InAs quantum dots on GaAs strain relaxation substrate. The strain relaxation of GaAs substrate can be obtained by burying InAs quantum dot in the substrate. The Green's function method is used to calculate strain energy distributed in the substrate surface under different burial depths. The calculation results are applied to the growth process, in which the effects of temperature, deposition rate and buried depth on the growth are considered. Simulation results show that, by controlling the growth temperature and deposition rate, uniform and orderly distribution of 2D islands can be obtained. In addition, the greater the depth of burial, the more unfavorable to the atomic aggregation.
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