基于金属辅助硅化学刻蚀发展了一种无掩模选择性区域制备硅纳米线阵列的方法, 并利用该方法成功制备了图形化的硅纳米线阵列. 扫描电子显微镜(scanning electron microscope, SEM) 分析表明, 所制备的硅纳米线阵列是高质量的多孔微纳米结构, 并利用拉曼光谱仪研究了室温下硅纳米线阵列的光致发光特性. 结果表明, 硅纳米线阵列可实现有效的光发射, 发光波峰为663 nm. 该方法工艺简单、有效, 可潜在地应用于构筑硅基光电集成器件.
A reasonable selective maskless etching process is developed to fabricate patterned Si nanowire arrays on the basis of metal-assisted silicon chemical etching. The patterned Si nanowire arrays are successfully fabricated in a selective maskless etching process. The surface morphology and photoluminescence of the patterned Si nanowire arrays are characterized by a scanning electron microscope (SEM) and a Raman spectrometer. It is indicated that patterned Si nanowire arrays are high quality porous micro- and nanostructured arrays. The photoluminescence of patterned Si nanowire arrays reveals that a strong light emission peak at 663 nm is obtained. Results show that a simple and efficient process to fabricate patterned Si nanowire arrays for Si-based optoelectronic integrated devices can be obtained.
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