针对传统纳米加工方法存在的操作复杂和成本昂贵等问题, 提出采用以表面自然氧化层作为掩膜, 结合Si3N4 探针扫描和KOH 溶液后续选择性刻蚀的摩擦诱导纳米加工方法. 基于针尖半径对加工线宽影响的规律, 实现了单晶硅表面较小线宽沟槽结构的加工. 在此基础上, 通过研究沟槽深度随刻蚀时间的变化规律, 确定了最佳的刻蚀加工时间, 并详细研究了载荷以及针尖扫描次数对表面沟槽结构加工的影响规律. 该方法无需专门制备掩膜, 操作简单,有望应用于加工功能表面织构、表面微阀、微反应器及单电子器件等,为纳米结构的加工提供了新途径.
Talking into account limitations of traditional nanofabrication approaches such as complicated manipulation and high cost, a new friction-induced fabrication method is proposed. With the native oxidation layer as etching “mask”, nanofabrication of silicon can be achieved by scanning with a Si3N4 probe and subsequent selective etching in KOH solution. By optimization of the tip radius, the groove structure with small line-width can be realized on monocrystalline silicon surface. Then, etching time dependence of groove depth is investigated to determine the best etching time for fabricating nanostructure.Finally, the effect of applied load and number of sliding cycles on nanostructure fabrication is studied. As a maskless and simple method, the proposed nanofabrication approach makes possible to fabricate surface texture with special functions, micromechanical valves for fluidic manipulation, single-electron devices, etc. With these advantages and potential applications, the direct fabrication method provides opportunities for nanofabrication
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