二维半导体MoTe2的极性调控与可重构电子器件中的应用

何小钱; 晓霜; 孙富钦; 赵占霞; 王小伟; 张珽

doi:10.12066/j.issn.1007-2861.2706

上海大学学报(自然科学版) >

2026 , Vol. 32 >Issue 1: 44 - 53

DOI: https://doi.org/10.12066/j.issn.1007-2861.2706

材料科学

二维半导体MoTe₂的极性调控与可重构电子器件中的应用

何小钱 ,
晓霜 ,
孙富钦 ,
赵占霞 ,
王小伟 ,
张珽

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1. 中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123;
2. 上海大学理学院, 上海 200444

收稿日期: 2025-05-22

网络出版日期: 2026-03-16

基金资助

国家自然科学基金资助项目(62371448,62125112,U24A20228,62401563,62204254);中国科学院基础与交叉前沿科研先导专项(XDB0520301);江苏省基础研究计划自然科学基金-基础研究计划重点项目(BK20243004);苏州市基础研究发展计划(SJC2023004)

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Polarity control of two-dimensional semiconductor MoTe₂ and its applications in reconfigurable electronics

HE Xiaoqian ,
GOU Xiaoshuang ,
SUN Fuqin ,
ZHAO Zhanxia ,
WANG Xiaowei ,
ZHANG Ting

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1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China;
2. College of Sciences, Shanghai University, Shanghai 200444, China

Received date: 2025-05-22

Online published: 2026-03-16

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摘要

以二维半导体二碲化钼(molybdenum ditelluride,MoTe₂)的载流子极性调控及其在可重构电子器件中的应用为研究目标,构建了一种基于氧化钽(tantalum oxide,TaO_x)/MoTe₂/六方氮化硼(hexagonal boron nitride,h-BN)异质结的双栅场效应晶体管(fleld-efiect transistor,FET).利用栅极电场作用下TaO_x/MoTe₂界面电荷的捕获/脱捕效应,实现了对双极性半导体MoTe₂载流子极性的调控.研究结果表明:通过调节控制栅极(control gate,CG)脉冲电压的极性与幅值,能够实现MoTe₂不同极性之间的可逆切换.负脉冲电压可以使MoTe₂的p型减弱,n型增强;而正向脉冲电压可使其p型增强,n型减弱.值得注意的是,这种调控效果会随着电压幅值的增大而显著增强.基于此方法,通过将两个串联的MoTe₂晶体管分别编程为n型和p型,实现了逻辑反相器功能.提出的利用界面电荷捕获效应实现二维半导体极性重构的方案,为功能可重构电子器件的实现提供了新思路.

关键词： 二维半导体; MoTe₂; 极性调控; 可重构电子器件; 逻辑反相器

本文引用格式

何小钱 , 晓霜 , 孙富钦 , 赵占霞 , 王小伟 , 张珽 . 二维半导体MoTe₂的极性调控与可重构电子器件中的应用[J]. 上海大学学报(自然科学版), 2026 , 32(1) : 44 -53 . DOI: 10.12066/j.issn.1007-2861.2706

Abstract

To explore the carrier polarity modulation of two-dimensional semiconductor molybdenum ditelluride (MoTe₂) and its applications in reconfigurable electronic devices, a dual-gate field-effect transistor (FET) based on a tantalum oxide (TaO_x)/MoTe₂/hexagonal boron nitride (h-BN) heterostructure was constructed. The reversible polarity control of MoTe₂ is achieved via charge trapping/detrapping effects at the TaO_x/MoTe₂ interface under the gate electric field. The results demonstrate that the carrier polarity in MoTe₂ can be modulated reversibly by controlling pulse polarity and amplitude of control gate (CG). A negative pulse voltage weakens the p-type characteristics and promotes the ntype characteristics of MoTe₂. Conversely, a positive pulse voltage enhances the p-type while suppressing the n-type behavior. Notably, this modulation effect becomes more pronounced with increasing voltage amplitudes. Based on this method, a logic inverter was successfully fabricated via programming two series-connected MoTe₂ transistors into n-type and p-type, respectively. This strategy of polarity modulation in two-dimensional semiconductors through interface charge trapping effects is considered to provide a novel idea for developing functionally reconfigurable electronic devices.

Key words： two-dimensional semiconductors; MoTe₂; polarity control; reconflgurable electronic devices; logic inverters

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