(Fe1-xNix)5+δGeTe2单晶室温磁电阻效应的机制研究及应用展望

龙秀敏; 潘豪杰; 曹桂新

doi:10.12066/j.issn.1007-2861.2680

上海大学学报(自然科学版) >

2025 , Vol. 31 >Issue 4: 657 - 665

DOI: https://doi.org/10.12066/j.issn.1007-2861.2680

量子科学

(Fe_1-xNi_x)_5+δGeTe₂单晶室温磁电阻效应的机制研究及应用展望

龙秀敏 ,
潘豪杰 ,
曹桂新

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1. 上海大学材料基因组工程研究院, 上海 200444;
2. 上海大学量子科技研究院, 上海 200444

收稿日期: 2025-03-18

网络出版日期: 2025-09-16

基金资助

国家重点研发计划资助项目(2024YFA1408000)

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Mechanism and prospects of room-temperature magnetoresistance effect in (Fe_1-xNi_x)_5+δGeTe₂ single crystals

LONG Xiumin ,
PAN Haojie ,
CAO Guixin

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1. Materials Genome Institute, Shanghai University, Shanghai 200444, China;
2. Institute for Quantum Science and Technology, Shanghai University, Shanghai 200444, China

Received date: 2025-03-18

Online published: 2025-09-16

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摘要

据报道,Ni掺杂的Fe$_{5}$GeTe$_{2}$单晶居里温度($T_{\rm C}$)可达478 K,由于室温铁磁范德瓦尔斯(van der Waals,vdW)材料在自旋电子学应用中具有较大潜力,故为了探究Ni掺杂对Fe$_{5}$GeTe$_{2}$单晶室温磁电阻(magnetoresistance,MR)效应的影响,采用化学气相输运(chemical vapor transport,CVT)法生长了一系列(Fe$_{1-x}$Ni$_{x})_{5+\delta}$GeTe$_{2}$单晶样品,并采用综合物性测量系统(physical property measurement system,PPMS)和磁性能测量系统(magnetic property measurement system,MPMS)分别对其磁性以及室温MR随着Ni掺杂含量的变化进行了测量.研究结果表明,室温MR随着Ni掺杂含量的变化出现了从线性负磁电阻(negative magnetoresistance,NMR)转变为2种不同类型的非线性NMR、再转变为线性正磁电阻(positive magnetoresistance,PMR)的变化趋势.详细分析了不同MR行为的微观机制并阐述了其在自旋电子学器件的应用前景.

关键词： 范德瓦尔斯铁磁材料; 居里温度; 磁电阻效应; 自旋电子学

本文引用格式

龙秀敏 , 潘豪杰 , 曹桂新 . (Fe_1-xNi_x)_5+δGeTe₂单晶室温磁电阻效应的机制研究及应用展望[J]. 上海大学学报(自然科学版), 2025 , 31(4) : 657 -665 . DOI: 10.12066/j.issn.1007-2861.2680

Abstract

According to reports, Ni-doped Fe$_{5}$GeTe$_{2}$ single crystals have a Curie temperature ($T_{\rm C}$) of up to 478 K. Given the great potential of room-temperature van der Waals (vdW) ferromagnetic materials in spintronics, a series of (Fe$_{1-x}$Ni$_{x})_{5+\delta }$GeTe$_{2}$ single crystals were formed via the chemical vapor transport (CVT) method, so as to investigate the effect of Ni doping on the room-temperature magnetoresistance (MR) effect of Fe$_5$GeTe$_2$ single crystals. Moreover, their magnetic properties and room-temperature MR changes with Ni doping were measured using a physical property measurement system (PPMS) and a magnetic property measurement system (MPMS). The results show that the room-temperature MR evolves from linear negative magnetoresistance (NMR) to two nonlinear NMR types and then to linear positive magnetoresistance (PMR) with increasing Ni content. The microscopic mechanisms of different MR effects and their prospects in spintronic devices were analyzed.

Key words： van der Waals (vdW) ferromagnetic material; Curie temperature; magnetoresistance (MR) effect; spintronics

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