二维材料因表现出很多不同于三维母体材料的新奇物理特性而备受关注. 2020 年, 通过化学气相沉积法合成了没有对应母体的新型范德华层状材料 MoSi2N4, 其较高的载流子迁移率、优异的力学强度、高透光率以及良好的环境稳定性等优势引起了研究者的兴趣. 不仅如此, 鉴于石墨烯/h-BN、MoS2/BP 等异质结在很多方面展现出明显优于单个材料的本征物理性质, 因此探索基于 MoSi2N4 异质结的物性逐渐成为研究者关注的焦点. 重点阐述了 MoSi2N4 异质结近年来的研究概况, 尤其是机械应变下对其电子性质方面的调控, 为进一步理解背后的物理力学机制并探索新型范德华家族 MA2Z4 及异质结的研究提供一定的指导.

Two-dimensional materials have attracted considerable attention because they exhibit various novel physical properties that differ from their three-dimensional parent materials. In 2020, MoSi2N4, a new van der Waals layered material without a corresponding parent material, was synthesized experimentally via chemical vapor deposition. Its advantages, such as high carrier mobility, excellent mechanical strength, high light transmittance, and good environmental stability, have attracted the interest of researchers. Moreover, because graphene/h-BN, MoS2/black phosphorus, and other heterostructures show intrinsic physical properties superior to those of the individual material, exploring the physical properties of MoSi2N4-based heterostructures has gradually become the focus of research. This paper focuses on recent research on this type of heterostructure. In particular, the regulation of its electronic properties under mechanical strain, which provides a guiding basis to improve the understanding of their physical and mechanical mechanisms and exploring the research on the van der Waals family MA2Z4 and its heterostructures.