由于单晶碳化硅 (SiC) 的传统化学机械抛光 (chemical mechanical polishing, CMP)技术加工效率低, 故提高 SiC 表面质量和材料去除率成为研究热点. 总结了 CMP 中抛光液的主要成分, 比较了 CMP 辅助抛光技术对单晶 SiC 抛光性能和作用机理的影响, 并对单晶SiC-CMP 技术的未来发展进行了展望.

The traditional chemical mechanical polishing (CMP) technology for single crystal silicon carbide (SiC) faces challenges with low processing efficiency. Consequently, improving surface quality and material removal rates of SiC has emerged as a research focal point. This paper provides a summary of the main components of CMP polishing liquids, compares the effects of CMP-assisted polishing technology on the performance and mechanisms of single crystal SiC polishing, and offers prospects for the future development of CMP for single crystal SiC.