采用扫描电子显微镜（scanning electron microscopy,SEM）、X 射线光电子能谱 (X-ray photoelectron spectroscopy,XPS) 和电流-电压 (current-voltage, I-V)曲线等测试方法,分析了 CdZnTe 晶片两步溶液法钝化工艺参数对晶片的表面形貌、表面成分和电学性能的影响。研究发现,两步溶液法的最佳钝化时间为 30 min,此时漏电流接近最小。CdZnTe 钝化后经 100 ℃、60 min 的热处理,金相和 SEM 显示钝化层表面的形貌更为均匀致密,XPS 深度剖析表明化学反应中间产物分解较为完全,TeO₂ 含量增多,I-V 测试显示热处理后漏电流减小较为明显,有效提高了探测器的性能。

The influence of different passivation time and annealing on the surface morphology, electrical properties and composition of CdZnTe is studied via scanning electron microscopy (SEM), current-voltage (I-V) and X-ray photoelectron spectroscopy (XPS). The result shows that the optimum passivation time for two-step passivation method is 30 minutes, and the leakage current is close to the minimum. After the wafers are annealed for 60 minutes at 100 ℃, metallography and SEM show that the surface morphology after heat treatment is to a more considerable degree in uniformity and density. XPS depth analysis shows that chemical reaction intermediate decomposition is relatively complete and that TeO₂ content is increased. I-V test shows that the leakage current is reduced, which effectively improves the detector's performance.