传统的浪涌保护电路对元器件的功率等级要求较高,导致整个电路结构的性能降低, 硬件成本提高.设计了一种低成本带吸收电容防浪涌的电路.通过理论分析、软件仿真以及实验测试证明了该电路结构采用更低功率等级的金属-氧化物半场效晶体管(metal-oxide-semiconductorfield-effect transistor, MOSFET), 能在降低浪涌保护电路成本的同时,提升浪涌电路电压等级以及电路的稳定性.

The conventional surge protection circuit requires a high-power level of circuit components, which leads to lower performance and higher hardware costs of the entire circuit structure. This paper presents the design of a low-cost anti-surge circuit with absorbing capacitance. Through theoretical analysis, software simulation, and experimental tests, it is proven that the designed circuit structure can increase the voltage grade and improve circuit stability by reducing the cost of the surge protection circuit with a lower power-level metal-oxide-semiconductor field-effect transistor (MOSFET).