收稿日期: 2017-11-08
网络出版日期: 2019-09-04
基金资助
国家自然科学基金资助项目(61575215);科技部重点研究与发展计划资助项目(2016YFB0402303)
1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings
Received date: 2017-11-08
Online published: 2019-09-04
为了简化工艺流程和减轻制备难度, 提出了 1.3 $\mu $m 分布反馈(distributed feedback, DFB)激光器的新型制作方法. 该方法采用纯折射率侧向耦合(laterally coupled, LC)结构, 将一阶光栅浅刻蚀在脊形波导两侧, 避免了激光器材料的二次外延和光栅深刻蚀. 采用非掺杂和 p 掺杂两种 InAs/GaAs 量子点(quantum dot, QD)样品来制备 LC-DFB 激光器. 与采用传统方法制备的 DFB 激光器相比, 非掺杂量子点 LC-DFB 激光器表现出了低的阈值电流, 其值为 1.12 mA/量子点层; p 掺杂量子点 LC-DFB 激光器表现出了较大的特征温度和斜率效率. 在室温下, 这种浅刻蚀的 LC-DFB 激光器实现了单纵模连续输出, 边模抑制比(side mode suppression ratio, SMSR)高达 51 dB. 同时, 在不同的测试温度和注入电流下, 这种激光器表现出了优良的波长稳定性.1.3 $\mu $m 浅刻蚀量子点 LC-DFB 激光器有望在远距离光纤通信领域实现巨大应用价值.
李齐柱, 伏霞, 张子旸, 王旭, 陈红梅, 侯春彩, 黄源清, 郭春扬, 闵嘉华 . 1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器[J]. 上海大学学报(自然科学版), 2019 , 25(4) : 472 -483 . DOI: 10.12066/j.issn.1007-2861.1982
An improved way of fabricating 1.3 $\mu$m distributed feedback (DFB) laser is presented to avoid overgrowth and deep etching. This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide. It is named laterally coupled DFB (LC-DFB) laser, whose properties is better than that of traditional DFB lasers. Two InAs/GaAs quantum dot (QD) samples, undoped QD and p-doped QD are prepared for DFB lasers. A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers. A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers. The index-coupled LC-DFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio (SMSR) of 51 dB. The laser also shows good wavelength stability against drive current and working temperature. The 1.3 $\mu$m InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics comunication.
| [1] | Stubenrauch M, Stracke G, Arsenijevi$\acute{c}$ D , et al. 15 Gb/s index-coupled distributed-feedback lasers based on 1.3 $\mu $m InGaAs quantum dots[J]. Applied Physics Letters, 2014,105(1):011103. |
| [2] | Takada K, Tanaka Y, Matsumoto T , et al. Wide-temperature-range 10.3 Gbit/s operations of 1.3 $\mu $m high-density quantum-dot DFB lasers[J]. Electronics Letters, 2011,47(3):206-208. |
| [3] | Shchekin O, Deppe D . 1.3 $\mu $m InAs quantum dot laser with $T_{0}=161$ K from 0 to 80 $^\circ$C[J]. Applied Physics Letters, 2002,80(18):3277-3279. |
| [4] | Hogg R A, Lü X Q, Wang Z G , et al. Self-assembled quantum-dot superluminescent light-emitting diodes[J]. Advances in Optics and Photonics, 2010,2(2):201-228. |
| [5] | Zhang Z Y, Oehler A E H, Resan B , et al. 1.55 $\mu $m InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser[J]. Scientific Reports, 2012,(2):477-480. |
| [6] | Bimberg D . Quantum dots for lasers, amplifiers and computing[J]. Journal of Physics D: Applied Physics, 2005,38(13):2055. |
| [7] | Deppe D G, Huang H, Shchekin O B . Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed[J]. IEEE Journal of Quantum Electronics, 2002,38(12):1587-1593. |
| [8] | Liu H Y, Dai Q F, Wang L J , et al. Effects of p-type doping on the optical properties of InAs/GaAs quantum dots[J]. Solid State Comunications, 2012,152(5):435-439. |
| [9] | Wen X M, Dao L V, Davis J A , et al. Carrier dynamics in p-type InGaAs/GaAs quantum dots[J]. Journal of Materials Science: Materials in Electronics, 2007,18(1):363-365. |
| [10] | Miller L M, Beernink K J, Verdeyen J T , et al. A distributed feedback ridge waveguide quantum well heterostructure laser[J]. IEEE Photonics Technology Letters, 1991,3(1):6-8. |
| [11] | Goshima K . 1.3 $\mu $m distributed feedback laser with half-etching mesa and high-density quantum dots[J]. Japanese Journal of Applied Physics, 2009,48(5R):050203. |
| [12] | Keishiro G, Takeru A, Kazumichi A , et al. 1.3 $\mu $m quantum dot distributed feedback laser with half-etched mesa vertical grating fabricated by Cl$_{2}$ dry etching[J]. Japanese Journal of Applied Physics, 2013, 52(6S):06GE03. |
| [13] | Yang C A, Zhang Y, Liao Y P , et al. 2 $\mu $m single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography[J]. Chinese Physics B, 2015,25(2):024204. |
| [14] | Martin R . CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode[J]. IEEE Photonics Technology Letters, 1995,7(3):244-246. |
| [15] | Sin Y K, Qui Y, Muller R E , et al. Laterally coupled InGaAsP/InP distributed feedback lasers at 1.5 $\mu$m for chemical sensing applications[J]. Electronics Letters, 2001,37(9):567-569. |
| [16] | Zhang Z Y, Oehler A E H, Resan B , et al. 1.55 $\mu $m InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser[J]. Scientific Reports, 2012,2:477. |
| [17] | Zhang Z Y, Jiang Q, Luxmoore I J , et al. A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap[J]. Nanotechnology, 2009,20(5):055204. |
| [18] | Cao Q, Yoon S F, Liu C Y , et al. Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures[J]. Journal of Applied Physics, 2008,104(3):033522. |
| [19] | Kumagai N, Watanabe K, Nakata Y , et al. Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy[J]. Journal of Crystal Growth, 2007,301:805-808. |
| [20] | Shchekin O, Ahn J, Deppe D . High temperature performance of self-organised quantum dot laser with stacked p-doped active region[J]. Electronics Letters, 2002,38(14):712-713. |
| [21] | Briggs R M, Frez C, Bagheri M , et al. Single-mode 2.65 $\mu$m InGaAsSb/AlInGaAsSb laterally coupled distributed-feedback diode lasers for atmospheric gas detection[J]. Optics Express, 2013,21(1):1317-1323. |
| [22] | Li J, Cheng J . Laterally-coupled distributed feedback laser with first-order gratings by interference lithography[J]. Electronics Letters, 2013,49(12):764-766. |
| [23] | Apiratikul P, He L, Richardson C . 2 $\mu $m laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate[J]. Applied Physics Letters, 2013,102(23):231101. |
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