Abstract:

The n type ZnO and p type SnS were used to prepare solar cells with the structure of ITO/ZnO/SnS/Al. The n-ZnO thin films were first obtained on the ITO substrate by using RF magnetron sputtering with different working pressures and sputtering powers. The pSnS thin films were then deposited on the nZnO layers by vacuum evaporation. Qualities of ZnO thin films were analyzed with an ultraviolet visible spectrophotometer (UI/VIS) and the properties of heterojunctions were measured with Xray diffraction (XRD). The photoelectric properties of SnS/ZnO heterojunction solar cells were characterized with I-V curves. As a result, a better solar cell was prepared with the fabrication of nZnO under 0.2 Pa working pressure, 150 W sputtering power and 40 min depositing time. The cell parameters are: J_SC=1.38 mA·cm-2, V_OC=0.42 V, F_F=0.40.

Key words:  solar cell; SnS; ZnO; vacuum evaporation; magnetron sputtering