Journal of Shanghai University(Natural Science Edition) ›› 2018, Vol. 24 ›› Issue (6): 968-977.doi: 10.12066/j.issn.1007-2861.1882

• Research Paper • Previous Articles     Next Articles

Effect of annealing atmosphere on electrochromic property of Bi$_{\textbf{2}}$O$_{\textbf{3}}$ thin films

YU Jingjing, SHI Ji, YU Shengwen()   

  1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
  • Received:2017-01-11 Online:2018-12-30 Published:2018-12-26
  • Contact: YU Shengwen E-mail:yusw@staff.shu.edu.cn

Abstract:

Bi$_{2}$O$_{3}$ thin films were prepared with a sol-gel technique, and annealed in air, nitrogen and oxygen. The phase structures of films were analyzed with X-ray diffraction (XRD). Surface morphology was observed with scanning electron microscope (SEM). Electrochromic properties were tested with ultraviolet-visible spectroscopy (UV-Vis) and an electrochemical workstation. It is discovered that the color state of Bi$_{2}$O$_{3}$ thin films switched between black and light yellow transparent. The Bi$_{2}$O$_{3}$ thin film annealed in nitrogen with 100${\%}$ stoichiometric phase, higher $\delta $ phase, and smaller particle size distribution has the highest electrochromic efficiency of about 21 cm$^{2}$/C.

Key words: bismuth, electrochromic, thin film, sol-gel

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