Abstract: The influence of spreading resistance and probe-metal film contact resistance on the contact resistance of metal-semiconductor is generally neglected in the conventional methods used for measuring metal-semiconductor contact risistance. Thus errors would be caused when one uses these methods to measure the metal-semi conductor contact resistance.
In this paper, according to the radial transmission line mode of circular ring electrode, an equation bearing the quantitative relationship between metal-semiconductor contact resistance and spreading resistance of thin film, probe-thin metal film contact resistance, current and voltage is derived. Based upon the equation, a new mode for measurement of metal-semiconductor contact resistance using four-point probe method is proposed. The metal-semiconductor contact resistance is accurately measured and the error sources from this measurement are discussed.