English

应用科学学报 ›› 1988, Vol. 6 ›› Issue (3): 227-232.

• 论文 • 上一篇    下一篇

高阻硅单晶欧姆接触的研究

陈存礼1, 陈正夫2, 陈毅平3, 钟信群3   

  1. 1. 南京大学;
    2. 上海市环境监测中心;
    3. 上海电子器材厂
  • 收稿日期:1987-02-09 修回日期:1987-06-05 出版日期:1988-09-30 发布日期:1988-09-30

INVESTIGATION OF OHMIC CONTACT ON HIGH RESISTIVITY SILICON SINGLE CRYSTAL

CHEN CUNLI1, CHEN ZHENGFU2, CHEN YIPING3, ZHONG XINQUN3   

  1. 1. Department of Physics, Nanjing University;
    2. Shanghai Environmental Monitoring Center;
    3. Shanghai Electronic Devices and Materials Works
  • Received:1987-02-09 Revised:1987-06-05 Online:1988-09-30 Published:1988-09-30

PDF

142

被引次数

3

摘要： 本文曾在我们以前欧姆接触工作的基础上[1~6],进一步用高硼合金(BAINiIn)和高磷合金(PSbAuIn)作接触金属,适当控制硅片的表面质量,结合电火花技术,简捷地分别使高达20000Ωcm的p型硅和4000Ωcm的n型硅都能得到良好的欧姆接触特性,并且在经过30次从300K到77K往返循环后仍保持线性的I-V特性.本文通过对不同温度的I-V特性、接触电阻率和离子探针的测量,结合金属对硅接触的接触电阻率与掺杂浓度的关系计算,讨论了欧姆接触的形成和载流子输运的特征.本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量.

Abstract: By appropriately controlling the surface quality of a silicon wafer and using the electrical sparking technique, high boron-alloy (BAlNiIn) and high phosphorus-alloy (PSbAuIn) can simply be used to make good ohmic contacts on silicon materials of resistivity as high as 20000Ωcm and 4000Ωcm for the P-type and N-type, respectively. Even after 30 times of temperature circulation from 300 K to 77 K, the linear I-V property of the ohmic contacts still remains. The ohmic contact formations and carrier transport characteristics are discussed, based on the current-voltage and specific contact resistance measurements at different temperatures, the ion microprobe analysis, and the calculation of specific contact resistance of metal to silicon as a function of doping concentration. This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.