1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器

doi:10.12066/j.issn.1007-2861.1982

上海大学学报(自然科学版) ›› 2019, Vol. 25 ›› Issue (4): 472-483.doi: 10.12066/j.issn.1007-2861.1982

1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器

李齐柱^1,³, 伏霞², 张子旸³, 王旭³, 陈红梅³, 侯春彩³, 黄源清³, 郭春扬³, 闵嘉华¹()

1. 上海大学材料科学与工程学院, 上海 200444
2. 国家知识产权局专利局专利审查协作江苏中心, 江苏苏州 215163
3. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏苏州 215123

收稿日期:2017-11-08 出版日期:2019-08-30 发布日期:2019-09-04
通讯作者: 闵嘉华 E-mail:minjh@shu.edu.cn
基金资助:
国家自然科学基金资助项目(61575215);科技部重点研究与发展计划资助项目(2016YFB0402303)

1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings

Qizhu LI^1,³, Xia FU², Ziyang ZHANG³, Xu WANG³, Hongmei CHEN³, Chuncai HOU³, Yuanqing HUANG³, Chunyang GUO³, Jiahua MIN¹()

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2. Patent Examination Cooperation Jiangsu Center of the Patent Office, National Intellectual Property Administration, Suzhou 215163, Jiangsu, China
3. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China

Received:2017-11-08 Online:2019-08-30 Published:2019-09-04
Contact: Jiahua MIN E-mail:minjh@shu.edu.cn

摘要/Abstract

摘要：

为了简化工艺流程和减轻制备难度, 提出了 1.3 $\mu $m 分布反馈(distributed feedback, DFB)激光器的新型制作方法. 该方法采用纯折射率侧向耦合(laterally coupled, LC)结构, 将一阶光栅浅刻蚀在脊形波导两侧, 避免了激光器材料的二次外延和光栅深刻蚀. 采用非掺杂和 p 掺杂两种 InAs/GaAs 量子点(quantum dot, QD)样品来制备 LC-DFB 激光器. 与采用传统方法制备的 DFB 激光器相比, 非掺杂量子点 LC-DFB 激光器表现出了低的阈值电流, 其值为 1.12 mA/量子点层; p 掺杂量子点 LC-DFB 激光器表现出了较大的特征温度和斜率效率. 在室温下, 这种浅刻蚀的 LC-DFB 激光器实现了单纵模连续输出, 边模抑制比(side mode suppression ratio, SMSR)高达 51 dB. 同时, 在不同的测试温度和注入电流下, 这种激光器表现出了优良的波长稳定性.1.3 $\mu $m 浅刻蚀量子点 LC-DFB 激光器有望在远距离光纤通信领域实现巨大应用价值.

关键词: 分布反馈激光器, 侧向耦合, 浅刻蚀光栅, 边模抑制比

Abstract:

An improved way of fabricating 1.3 $\mu$m distributed feedback (DFB) laser is presented to avoid overgrowth and deep etching. This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide. It is named laterally coupled DFB (LC-DFB) laser, whose properties is better than that of traditional DFB lasers. Two InAs/GaAs quantum dot (QD) samples, undoped QD and p-doped QD are prepared for DFB lasers. A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers. A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers. The index-coupled LC-DFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio (SMSR) of 51 dB. The laser also shows good wavelength stability against drive current and working temperature. The 1.3 $\mu$m InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics comunication.

Key words: distributed feedback (DFB) laser, laterally coupled (LC), shallow-etched grating, side mode suppression ratio (SMSR)

中图分类号:

TN31

李齐柱, 伏霞, 张子旸, 王旭, 陈红梅, 侯春彩, 黄源清, 郭春扬, 闵嘉华. 1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器[J]. 上海大学学报(自然科学版), 2019, 25(4): 472-483.

Qizhu LI, Xia FU, Ziyang ZHANG, Xu WANG, Hongmei CHEN, Chuncai HOU, Yuanqing HUANG, Chunyang GUO, Jiahua MIN. 1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings[J]. Journal of Shanghai University（Natural Science Edition）, 2019, 25(4): 472-483.

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1.3 $\mu $m InAs/GaAs 量子点侧向耦合浅刻蚀分布反馈激光器

1.3 $\mu $m InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings

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